Thermal Annealing and Propagation of Shockley Stacking Faults in 4H-SiC PiN Diodes

被引：0

作者：

Joshua D. Caldwell

Kendrick X. Liu

Marko J. Tadjer

Orest J. Glembocki

Robert E. Stahlbush

Karl D. Hobart

Fritz Kub

机构：

[1] Naval Research Laboratory,Electronic Science and Technology Division

来源：

Journal of Electronic Materials | 2007年 / 36卷

关键词：

Silicon carbide; pin diode; Shockley stacking faults (SSFs); stacking fault propagation; degradation; annealing; stressing; stacking fault shrinking; electroluminescence (EL); optical beam induced current (OBIC);

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Stacking faults within 4H-SiC PiN diodes are known to be detrimental to device operation. Here, we present electroluminescence (EL) images of 4H-SiC PiN diodes providing evidence that electrically and optically stimulated Shockley stacking fault (SSF) propagation is a reversible process at temperatures as low as 210°C. Optical beam induced current (OBIC) images taken following complete optical stressing of a PiN diode and that lead to a small number of completely propagated SSFs provide evidence that such defects propagate across the n–/p+ interface and continue to grow throughout the p+ layer. These observations bring about questions regarding the validity of the currently accepted driving force mechanism for SSF propagation.

引用

页码：318 / 323

页数：5

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