Injected carrier concentration dependence of the expansion of single Shockley-type stacking faults in 4H-SiC PiN diodes

被引：48

作者：

Tawara, T. ^{[1
,2
]}

Matsunaga, S. ^{[1
,2
]}

Fujimoto, T. ^{[2
]}

Ryo, M. ^{[2
]}

Miyazato, M. ^{[1
,2
]}

Miyazawa, T. ^{[3
]}

Takenaka, K. ^{[1
,2
]}

Miyajima, M. ^{[1
,2
]}

Otsuki, A. ^{[2
]}

Yonezawa, Y. ^{[1
]}

Kato, T. ^{[1
]}

Okumura, H. ^{[1
]}

Kimoto, T. ^{[4
]}

Tsuchida, H. ^{[3
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058569, Japan

[2] Fuji Elect Co Ltd, Hino, Tokyo 1918502, Japan

[3] Cent Res Inst Elect Power Ind, Yokosuka, Kanagawa 2400196, Japan

[4] Kyoto Univ, Kyotodaigaku Katsura, Nishikyo 6158510, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2018年 / 123卷 / 02期

关键词：

DEFECTS; VOLTAGE;

D O I：

10.1063/1.5009365

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the relationship between the dislocation velocity and the injected carrier concentration on the expansion of single Shockley-type stacking faults by monitoring the electroluminescence from 4H-SiC PiN diodes with various anode Al concentrations. The injected carrier concentration was calculated using a device simulation that took into account the measured accumulated charge in the drift layer during diode turn-off. The dislocation velocity was strongly dependent on the injected hole concentration, which represents the excess carrier concentration. The activation energy of the dislocation velocity was quite small ( below 0.001 eV between 310 and 386 K) over a fixed range of hole concentrations. The average threshold hole concentration required for the expansion of bar-shaped single Shockley-type stacking faults at the interface between the buffer layer and the substrate was determined to be 1.6-2.5 x 10(16) cm(-3) for diodes with a p-type epitaxial anode with various Al concentrations. Published by AIP Publishing.

引用

页数：6

共 50 条

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[J]. 1600, American Institute of Physics Inc. (123):
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