Stacking faults in 4H-SiC epilayers and IGBTs

Silicon carbide (SiC) power devices are heading towards high power and high voltage, where 4H-SiC bipolar devices play a key role due to low on -resistance and ultra -high blocking voltage. However, stacking faults (SFs) can result in forward voltage drifts and increased reverse leakage currents in bipolar devices. Moreover, SFs expand easily from basal plane dislocation (BPD) under current stress, severely damaging the device reliability. In this review, the properties and characterization methods of SFs are presented. The formation and expansion mechanisms of SFs and the approaches to suppress SFs expansion are addressed. In particular, the challenge of SFs suppression in insulated gate bipolar transistors (IGBTs) is also discussed. Finally, this review proposes some directions for futher SFs research, which could provide insights into controlling SFs in 4H-SiC epilayers and IGBTs.