Non-destructive observation of in-grown stacking faults in 4H-SiC epitaxial layer using mirror electron microscope

被引：4

作者：

Hasegawa, Masaki ^{[1
]}

Ohno, Toshiyuki ^{[1
]}

机构：

[1] Hitachi Ltd, Cent Res Lab, Tokyo 1858601, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 110卷 / 07期

关键词：

SILICON-CARBIDE; DISLOCATIONS; DEFECTS; DIODES; WAFERS; POWER; 4H;

D O I：

10.1063/1.3646501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Mirror electron microscope (MEM) observation has been conducted for a 4-mu m-thick n-doped 4H-SiC epitaxial layer. If the sample is simultaneously illuminated with ultraviolet (UV) light of a slightly greater energy than the bandgap energy of 4H-SiC, in-grown stacking faults (IGSFs) can be clearly observed in MEM images. These observations were performed non-destructively, as almost all irradiated electrons returned without impinging the sample surface due to the negative voltage applied to the sample. High spatial resolution observation via MEM showed that multiple IGSFs were stacked up. The phenomenon in which the contrast of the IGSFs vanished in the absence of UV illumination and under UV illumination with a lower energy than the bandgap energy revealed that the origin of the contrast was the negative charging of IGSFs trapping electrons excited by UV light. (C) 2011 American Institute of Physics. [doi:10.1063/1.3646501]

引用

页数：6

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