In-grown stacking faults identified in 4H-SiC epilayers grown at high growth rate

被引：1
|
作者：
Feng, G. [1 ]
Suda, J. [1 ]
Kimoto, T. [1 ]
机构：
[1] Kyoto Univ, Dept Elect Sci & Engn, Nishikyo Ku, Kyoto 6158510, Japan
来源：
SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2 | 2010年 / 645-648卷
关键词：
In-grown stacking fault; photoluminescence mapping; stacking sequence;
D O I：
10.4028/www.scientific.net/MSF.645-648.287
中图分类号：
TB33 [复合材料];
学科分类号：
摘要：
In-grown stacking faults (IGSFs) in thick 4H-SiC epilayers grown at high growth rates have been characterized by micro-photoluminescence (micro-PL) spectroscopy and its intensity mapping. Strong PL emissions from the IGSFs are observed even at room temperature. Three kinds of IGSFs have been identified in the samples based on the micro-PL spectra. Each IGSF shows the specific PL emission peak located at 460 nm, 480 nm, and 500 nm, respectively. The shapes, distributions, and densities of IGSFs in the epilayers are reveak.d by the micro-PL intensity mapping. The stacking sequences of three IGSFs have been determined as (4,4), (3,5), and (6,2) in the Zhadonov's notation, respectively, by high-resolution transmission electron microscopy observations. Three identified IGSFs are then classified as quadruple Shockley SFs, triple Shockley SFs, and double Shockley SFs, respectively, based on the shear formation model.
引用
收藏
页码：287 / 290
页数：4
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