Structure of in-grown stacking faults in the 4H-SiC epitaxial layers

被引：13
|
作者：
Izumi, S
Tsuchida, H
Tawara, T
Kamata, I
Izumi, K
机构：
[1] Cent Res Inst Elect Power Ind, Yokosuka, Kanagawa 2400196, Japan
[2] Fuji Elect Adv Technol Co Ltd, Matsumoto, Nagano 3900821, Japan
来源：
SILICON CARBIDE AND RELATED MATERIALS 2004 | 2005年 / 483卷
关键词：
epitaxial growth; stacking fault; KOH etching; photoluminescence; TEM;
D O I：
10.4028/www.scientific.net/MSF.483-485.323
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We estigated the structure of the in-grown stacking faults (SFs) in the 4H-SiC epilayers. The in-grown SFs exhibited the photoluminescence (PL) peaks representing phonon replicas with bandgap of 2.710 eV. The in-grown SFs were confirmed to be triangular-shaped by PL mapping and KOH etch pit observation. High-resolution TEM image showed that the in-grown SFs have an identical stacking sequence that differ from single or double Shockley SF. In addition, the density of the in-grown SF depended on growth conditions.
引用
收藏
页码：323 / 326
页数：4
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