Optical, electrical and lifetime characterization of in-grown stacking faults in 4H-SiC

被引：0
|
作者：
Caldwell, Joshua David [1 ]
Klein, Paul B. [1 ]
Glembocki, Orest J. [1 ]
Stahlbush, Robert E. [1 ]
Liu, Kendrick X. [1 ]
Hobart, Karl D. [1 ]
Kub, Fritz [1 ]
机构：
[1] Naval Res Lab, Div Elect Sci & Technol, 4555 Overlook Ave SW, Washington, DC 20375 USA
来源：
SILICON CARBIDE 2006 - MATERIALS, PROCESSING AND DEVICES | 2006年 / 911卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Here we present optical beam induced current, electroluminescence, time resolved photoluminescence and current-voltage measurements on several 4H-SiC PiN diodes containing in-grown stacking faults (IGSFs). These defects were observed to act as either current shorts, creating a direct electrical contact between the p+ and n+ layers, or as a current barrier. Carrier lifetime measurements verify that the change in behavior is indeed associated with changes in the conductivity of the material in the vicinity of the defect and not due to local changes in the carrier lifetime. The IGSFs discussed here appear to differ from those previously discussed in the literature and may constitute a new, multi-layered IGSF.
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页码：187 / +
页数：2
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