Structure of in-grown stacking faults in the 4H-SiC epitaxial layers

被引：13

作者：

Izumi, S

Tsuchida, H

Tawara, T

Kamata, I

Izumi, K

机构：

[1] Cent Res Inst Elect Power Ind, Yokosuka, Kanagawa 2400196, Japan

[2] Fuji Elect Adv Technol Co Ltd, Matsumoto, Nagano 3900821, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2004 | 2005年 / 483卷

关键词：

epitaxial growth; stacking fault; KOH etching; photoluminescence; TEM;

D O I：

10.4028/www.scientific.net/MSF.483-485.323

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We estigated the structure of the in-grown stacking faults (SFs) in the 4H-SiC epilayers. The in-grown SFs exhibited the photoluminescence (PL) peaks representing phonon replicas with bandgap of 2.710 eV. The in-grown SFs were confirmed to be triangular-shaped by PL mapping and KOH etch pit observation. High-resolution TEM image showed that the in-grown SFs have an identical stacking sequence that differ from single or double Shockley SF. In addition, the density of the in-grown SF depended on growth conditions.

引用

页码：323 / 326

页数：4

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