Conductance anomalies in gated V-groove quantum wires

被引：4
|
作者：
Larkin, VV
Morozov, SV
Ivanov, DY
Larkin, IA
Houston, PA
Hill, G
Roberts, JS
Dubrovskii, YV
Jefferson, JH
机构：
[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England
[2] Inst Microelect Technol & High Pur Mat, Chernogolovka 142432, Russia
[3] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England
[4] Sensors & Elect Div, QinetiQ, Malvern WR14 3PS, Worcs, England
来源：
NANOTECHNOLOGY | 2002年 / 13卷 / 04期
关键词：
D O I：
10.1088/0957-4484/13/4/309
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We present transconductance measurements on gated V-groove GaAs/AlGaAs quantum wire heterostructures grown by metal-organic chemical vapour deposition. The results show anomalously large negative magnetoresistance for a magnetic field perpendicular to the current, and oscillations in conductance with the field oriented along the width of the wire. Clear steps in conductance versus gate voltage are also observed and these are consistent with the charging of a nearby 'droplet' with each step corresponding to a change in the occupation of a single electron.
引用
收藏
页码：487 / 490
页数：4
相关论文
共 50 条
  • [41] Application of Tsallis formalism to study entropy and specific heat of V-groove quantum wires
    Khordad, R.
    Bornaei, R.
    Mardani-Fard, H. A.
    INDIAN JOURNAL OF PHYSICS, 2015, 89 (06) : 545 - 550
  • [42] Reduced temperature sensitivity of the polarization properties of hydrogenated InGaAsN V-groove quantum wires
    Felici, Marco
    Polimeni, Antonio
    Tartaglini, Elena
    Notargiacomo, Andrea
    De Luca, Marta
    Carron, Romain
    Fekete, Dan
    Dwir, Benjamin
    Rudra, Alok
    Capizzi, Mario
    Kapon, Eli
    APPLIED PHYSICS LETTERS, 2012, 101 (15)
  • [43] Optical imaging spectroscopy of V-groove quantum wires: from localized to delocalized excitons
    Guillet, T
    Voliotis, V
    Grousson, R
    Menant, M
    Wang, XL
    Ogura, M
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 17 (1-4): : 164 - 168
  • [44] InGaAs and InAsP V-groove quantum wires using arsenic/phosphorus exchange preparation
    Kappelt, M
    Türck, V
    Bimberg, D
    Kirmse, H
    Hähnert, I
    Neumann, W
    JOURNAL OF CRYSTAL GROWTH, 1998, 195 (1-4) : 552 - 557
  • [45] Band structure and intersubband absorption in modulation-doped V-groove quantum wires
    Crnjanski, Jasna V.
    Gvozdic, Dejan M.
    JOURNAL OF APPLIED PHYSICS, 2007, 101 (01)
  • [46] OMVPE fabrication of continuous transitions between GaAs/AlGaAs quantum wells and V-groove quantum wires
    Lelarge, F
    Kaufman, D
    Dwir, B
    Mautino, S
    Rudra, A
    Kapon, E
    JOURNAL OF CRYSTAL GROWTH, 2000, 221 : 540 - 545
  • [47] The role of scanning cathodoluminescence in the development of MOVPE growth of GaAs/AlGaAs V-groove quantum wires
    Williams, GM
    Steer, M
    Cullis, AG
    Whitehouse, CR
    Skolnick, MS
    Roberts, JS
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1997, 1997, (157): : 655 - 660
  • [48] Fermi-edge singularities in single modulation-doped v-groove quantum wires
    Hauert, M
    Roshan, R
    Maciel, AC
    Kim, J
    Ryan, JF
    Schwarz, A
    Kaluza, A
    Schäpers, T
    Luth, H
    PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 1367 - 1368
  • [49] Photoluminescence study of V-groove quantum wires: The influence of disorder on the optical spectra and the carrier thermalization
    Oberli, DY
    Vouilloz, F
    Ambigapathy, R
    Deveaud, B
    Kapon, E
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2000, 178 (01): : 211 - 220
  • [50] 3D-to-1D carrier scattering in GaAs V-groove quantum wires
    Kiener, C
    Rota, L
    Turner, K
    Freyland, JM
    Maciel, AC
    Ryan, JF
    Marti, U
    Martin, D
    MorierGemoud, F
    Reinhart, FK
    SOLID-STATE ELECTRONICS, 1996, 40 (1-8) : 257 - 260
12345