Conductance anomalies in gated V-groove quantum wires

被引：4
|
作者：
Larkin, VV
Morozov, SV
Ivanov, DY
Larkin, IA
Houston, PA
Hill, G
Roberts, JS
Dubrovskii, YV
Jefferson, JH
机构：
[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England
[2] Inst Microelect Technol & High Pur Mat, Chernogolovka 142432, Russia
[3] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England
[4] Sensors & Elect Div, QinetiQ, Malvern WR14 3PS, Worcs, England
来源：
NANOTECHNOLOGY | 2002年 / 13卷 / 04期
关键词：
D O I：
10.1088/0957-4484/13/4/309
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We present transconductance measurements on gated V-groove GaAs/AlGaAs quantum wire heterostructures grown by metal-organic chemical vapour deposition. The results show anomalously large negative magnetoresistance for a magnetic field perpendicular to the current, and oscillations in conductance with the field oriented along the width of the wire. Clear steps in conductance versus gate voltage are also observed and these are consistent with the charging of a nearby 'droplet' with each step corresponding to a change in the occupation of a single electron.
引用
收藏
页码：487 / 490
页数：4
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