Conductance anomalies in gated V-groove quantum wires

被引：4
|
作者：
Larkin, VV
Morozov, SV
Ivanov, DY
Larkin, IA
Houston, PA
Hill, G
Roberts, JS
Dubrovskii, YV
Jefferson, JH
机构：
[1] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England
[2] Inst Microelect Technol & High Pur Mat, Chernogolovka 142432, Russia
[3] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England
[4] Sensors & Elect Div, QinetiQ, Malvern WR14 3PS, Worcs, England
来源：
NANOTECHNOLOGY | 2002年 / 13卷 / 04期
关键词：
D O I：
10.1088/0957-4484/13/4/309
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We present transconductance measurements on gated V-groove GaAs/AlGaAs quantum wire heterostructures grown by metal-organic chemical vapour deposition. The results show anomalously large negative magnetoresistance for a magnetic field perpendicular to the current, and oscillations in conductance with the field oriented along the width of the wire. Clear steps in conductance versus gate voltage are also observed and these are consistent with the charging of a nearby 'droplet' with each step corresponding to a change in the occupation of a single electron.
引用
收藏
页码：487 / 490
页数：4
相关论文
共 50 条
  • [21] Electron and hole states in V-groove quantum wires: an effective potential calculation
    Creci, G
    Weber, G
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (08) : 690 - 694
  • [22] Hot-carrier photoluminescence from GaAs V-groove quantum wires
    Maciel, A.C.
    Cingolani, R.
    Rinaldi, R.
    Ryan, J.F.
    Ferrara, M.
    Marti, U.
    Martin, D.
    Mourier-Gemoud, F.
    Reinhart, F.K.
    Semiconductor Science and Technology, 1994, 9 (5 SUPPL) : 893 - 895
  • [23] Spectral features and optical absorption of vertically stacked V-groove quantum wires
    Eugenio Giraldo-Tobón
    J. L. Palacio
    Guillermo L. Miranda
    M. R. Fulla
    The European Physical Journal Plus, 137
  • [24] Spectral features and optical absorption of vertically stacked V-groove quantum wires
    Giraldo-Tobon, Eugenio
    Palacio, J. L.
    Miranda, Guillermo L.
    Fulla, M. R.
    EUROPEAN PHYSICAL JOURNAL PLUS, 2022, 137 (09):
  • [25] Narrow inhomogeneous broadening of V-groove quantum wires grown on vicinal substrates
    Moret, N.
    Oberli, D. Y.
    Dwir, B.
    Rudra, A.
    Gallo, P.
    Kapon, E.
    APPLIED PHYSICS LETTERS, 2008, 93 (17)
  • [26] Carrier tunneling between parallel GaAs/AlGaAs V-groove quantum wires
    Karlsson, KF
    Weman, F
    Leifer, K
    Rudra, A
    Kapon, E
    Physics of Semiconductors, Pts A and B, 2005, 772 : 919 - 920
  • [27] HOT-CARRIER PHOTOLUMINESCENCE FROM GAAS V-GROOVE QUANTUM WIRES
    MACIEL, AC
    RYAN, JF
    RINALDI, R
    CINGOLANI, R
    FERRARA, M
    MARTI, U
    MARTIN, D
    MORIERGEMOUD, F
    REINHART, FK
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (05) : 893 - 895
  • [28] Characterization of GaAs/AlGaAs V-groove quantum wires by using scanning μ-photoluminescence
    Hahn, CK
    Roh, CH
    Kim, H
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2004, 45 (04) : L799 - L802
  • [29] Influence of strain and diffusion on the growth of V-groove InGaAs/GaAs quantum wires
    Leifer, K
    Lelarge, F
    Rudra, A
    Stauss, S
    Kapon, E
    PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 283 - 284
  • [30] Electron transport in modulation-doped GaAs v-groove quantum wires
    Schwarz, A
    Kaluza, A
    Schäpers, T
    Hardtdegen, H
    Lüth, H
    Meertens, D
    Dieker, C
    Maciel, AC
    Kim, J
    O'Sullivan, ED
    Ryan, JF
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2000, 7 (3-4): : 760 - 765
12345