OMVPE fabrication of continuous transitions between GaAs/AlGaAs quantum wells and V-groove quantum wires

The fabrication of defect-free and continuous transitions between A1GaAs/GaAs quantum wells (QWs) and quantum wires (QWRs) using organo-metallic vapor phase epitaxy on variable-width V-grooved substrates is demonstrated. The basic idea of our approach is developed using a Monte-Carlo simulation of the self-limiting growth on tapered grooves. A detailed surface and cross-sectional atomic force microscopy study reveals the high quality of the resulting coupled quantum structures. In particular, we demonstrate the efficient control, brought about by this experimental technique, on the well-wire transitions. (C) 2000 Elsevier Science B.V. All rights reserved.