OMVPE fabrication of continuous transitions between GaAs/AlGaAs quantum wells and V-groove quantum wires

被引：7

作者：

Lelarge, F ^{[1
]}

Kaufman, D ^{[1
]}

Dwir, B ^{[1
]}

Mautino, S ^{[1
]}

Rudra, A ^{[1
]}

Kapon, E ^{[1
]}

机构：

[1] Swiss Fed Inst Technol, Dept Phys, EPFL, CH-1015 Lausanne, Switzerland

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 221卷

关键词：

III-V semiconductor; quantum wells and quantum wires; adiabatic transitions; organo-metallic vapor phase epitaxy; Monte-Carlo simulation; atomic force microscopy;

D O I：

10.1016/S0022-0248(00)00774-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The fabrication of defect-free and continuous transitions between A1GaAs/GaAs quantum wells (QWs) and quantum wires (QWRs) using organo-metallic vapor phase epitaxy on variable-width V-grooved substrates is demonstrated. The basic idea of our approach is developed using a Monte-Carlo simulation of the self-limiting growth on tapered grooves. A detailed surface and cross-sectional atomic force microscopy study reveals the high quality of the resulting coupled quantum structures. In particular, we demonstrate the efficient control, brought about by this experimental technique, on the well-wire transitions. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：540 / 545

页数：6

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