High-density V-groove InGaAs/AlGaAs quantum wires on submicron gratings by constant growth technique

被引：6
|
作者：
Tsurumachi, N
Son, CS
Kim, TG
Ogura, M
机构：
[1] Natl Inst AIST, Res Inst Photon, Tsukuba, Ibaraki 1706027, Japan
[2] NEDO, Tokyo 1706027, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2002年 / 237卷
关键词：
photoluminescence; metalorganic chemical vapor depositions quantum wire; distributed feedback laser;
D O I：
10.1016/S0022-0248(01)02359-4
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
High-density InGaAs/AlGaAs quantum wire (QWR) structures with a period of 430 nm were successfully grown by using constant metalorganic chemical vapor deposition growth technique in which submicron gratings were preserved even after an epitaxial growth of 1mum thickness. The quantum confinement effect of the InGaAs/AlGaAs QWRs is strong due to the large band offset and enhanced migration of surface adsorbed III-group element species compared with the GaAs/AlGaAs QWRs. The photoluminescence signal of the InGaAs/AlGaAs QWRs was observed in the temperature range from 10 to 300K with a relatively narrow full width at half maximum of <40meV. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：1486 / 1490
页数：5
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