A study of the effects of microwave electromagnetic radiation on dynamic random access memory operation

被引：4
|
作者：
Bohorquez, JL [1 ]
Kenneth, O [1 ]
机构：
[1] Univ Florida, SiMICS, Dept Elect & Comp Engn, Gainesville, FL 32611 USA
来源：
2004 INTERNATIONAL SYMPOSIUM ON ELECTROMAGNETIC COMPATIBILITY, SYMPOSIUM RECORD 1-3 | 2004年
关键词：
DRAM chips; electromagnetic interference; clock distribution; wireless clock distribution; wireless interconnect;
D O I：
10.1109/ISEMC.2004.1349927
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of microwave electromagnetic (EM) radiation on dynamic random access memory (DRAM) chips are examined. A clear correlation between EM radiation and an increase in the bit error rate is shown through experimentation under different stress conditions. However, for the power level of similar to100 mW at operating frequency of 24 GHz proposed for wireless interconnection using an external antenna, the EMI on DRAM operation is negligible.
引用
收藏
页码：815 / 819
页数：5
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