Dynamic and temperature effects in toggle magnetic random access memory

被引：14
|
作者：
Cimpoesu, Dorin [1 ]
Stancu, Alexandru
Spinu, Leonard
机构：
[1] Univ New Orleans, Adv Mat Res Inst, New Orleans, LA 70148 USA
[2] Alexandru Ioan Cuza Univ, Fac Phys, Iasi 700506, Romania
[3] Univ New Orleans, Dept Phys, New Orleans, LA 70148 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2007年 / 102卷 / 01期
关键词：
D O I：
10.1063/1.2752138
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this paper we have studied the dynamic switching in magnetic random access memory (MRAM) and its dependence on thermal effects due to a finite temperature. The model is based on the Landau-Lifshitz-Gilbert equation and the stochastic Landau-Lifshitz-Gilbert equation which are numerically integrated. The magnetic layers are assumed to be ellipsoid shaped with each magnetic layer single domain. In addition, we have taken into account the uniaxial intrinsic anisotropy. Simulations were performed for both balanced and nonbalanced synthetic antiferromagnetic elements. The switching properties are discussed as a function of applied field pulses length and shape. In this paper we present how the thermal fluctuations affect the switching behavior, the reliability, and the writing speed of MRAM devices. (c) 2007 American Institute of Physics.
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页数：7
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