Dynamic computing random access memory

被引:26
|
作者
Traversa, F. L. [1 ,2 ]
Bonani, F. [3 ]
Pershin, Y. V. [4 ]
Di Ventra, M. [2 ]
机构
[1] Univ Autonoma Barcelona, Dept Elect Engn, E-08193 Barcelona, Spain
[2] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA
[3] Politecn Torino, Dipartimento Elettron & Telecomunicaz, I-10129 Turin, Italy
[4] Univ S Carolina, Dept Phys & Astron, Columbia, SC 29208 USA
基金
美国国家科学基金会;
关键词
memory; memcapacitive systems; computing; SYSTEMS; MEMRISTOR; OXIDES; FILM;
D O I
10.1088/0957-4484/25/28/285201
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The present von Neumann computing paradigm involves a significant amount of information transfer between a central processing unit and memory, with concomitant limitations in the actual execution speed. However, it has been recently argued that a different form of computation, dubbed memcomputing (Di Ventra and Pershin 2013 Nat. Phys. 9 200-2) and inspired by the operation of our brain, can resolve the intrinsic limitations of present day architectures by allowing for computing and storing of information on the same physical platform. Here we show a simple and practical realization of memcomputing that utilizes easy-to-build memcapacitive systems. We name this architecture dynamic computing random access memory (DCRAM). We show that DCRAM provides massively-parallel and polymorphic digital logic, namely it allows for different logic operations with the same architecture, by varying only the control signals. In addition, by taking into account realistic parameters, its energy expenditures can be as low as a few fJ per operation. DCRAM is fully compatible with CMOS technology, can be realized with current fabrication facilities, and therefore can really serve as an alternative to the present computing technology.
引用
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页数:10
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