Dynamic computing random access memory

被引:26
|
作者
Traversa, F. L. [1 ,2 ]
Bonani, F. [3 ]
Pershin, Y. V. [4 ]
Di Ventra, M. [2 ]
机构
[1] Univ Autonoma Barcelona, Dept Elect Engn, E-08193 Barcelona, Spain
[2] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA
[3] Politecn Torino, Dipartimento Elettron & Telecomunicaz, I-10129 Turin, Italy
[4] Univ S Carolina, Dept Phys & Astron, Columbia, SC 29208 USA
基金
美国国家科学基金会;
关键词
memory; memcapacitive systems; computing; SYSTEMS; MEMRISTOR; OXIDES; FILM;
D O I
10.1088/0957-4484/25/28/285201
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The present von Neumann computing paradigm involves a significant amount of information transfer between a central processing unit and memory, with concomitant limitations in the actual execution speed. However, it has been recently argued that a different form of computation, dubbed memcomputing (Di Ventra and Pershin 2013 Nat. Phys. 9 200-2) and inspired by the operation of our brain, can resolve the intrinsic limitations of present day architectures by allowing for computing and storing of information on the same physical platform. Here we show a simple and practical realization of memcomputing that utilizes easy-to-build memcapacitive systems. We name this architecture dynamic computing random access memory (DCRAM). We show that DCRAM provides massively-parallel and polymorphic digital logic, namely it allows for different logic operations with the same architecture, by varying only the control signals. In addition, by taking into account realistic parameters, its energy expenditures can be as low as a few fJ per operation. DCRAM is fully compatible with CMOS technology, can be realized with current fabrication facilities, and therefore can really serve as an alternative to the present computing technology.
引用
收藏
页数:10
相关论文
共 50 条
  • [21] 64 KBIT MOS DYNAMIC RANDOM-ACCESS MEMORY
    NATORI, K
    OGURA, M
    IWAI, H
    MAEGUCHI, K
    TAGUCHI, S
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) : 482 - 485
  • [22] On the retention time distribution of dynamic random access memory (DRAM)
    Hamamoto, T
    Sugiura, S
    Sawada, S
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (06) : 1300 - 1309
  • [23] Bioresistive random access memory with an in-memory computing function based on graphene quantum dots
    Wang, Lu
    Wang, Yuting
    Yang, Jing
    Li, Wenhao
    Wen, Dianzhong
    [J]. NEW JOURNAL OF CHEMISTRY, 2023, 47 (19) : 9459 - 9463
  • [24] In-Memory Logic Operations and Neuromorphic Computing in Non-Volatile Random Access Memory
    Ou, Qiao-Feng
    Xiong, Bang-Shu
    Yu, Lei
    Wen, Jing
    Wang, Lei
    Tong, Yi
    [J]. MATERIALS, 2020, 13 (16)
  • [25] Conductive Bridge Random Access Memory (CBRAM): Challenges and Opportunities for Memory and Neuromorphic Computing Applications
    Abbas, Haider
    Li, Jiayi
    Ang, Diing Shenp
    [J]. MICROMACHINES, 2022, 13 (05)
  • [26] Microcrystalline oxide-incorporated new diffusion barrier for dynamic random access memory and ferroelectric random access memory capacitor electrode
    Yoon, DS
    Baik, HK
    Lee, SM
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1997, 15 (05): : 2781 - 2786
  • [27] Programming Techniques of Resistive Random-Access Memory Devices for Neuromorphic Computing
    Machado, Pau
    Manich, Salvador
    Gomez-Pau, Alvaro
    Rodriguez-Montanes, Rosa
    Gonzalez, Mireia Bargallo
    Campabadal, Francesca
    Arumi, Daniel
    [J]. ELECTRONICS, 2023, 12 (23)
  • [28] Magnetic Random-Access Memory-Based Approximate Computing: An Overview
    Wang, You
    Zhang, Kaili
    Wu, Bo
    Zhang, Deming
    Zhao, Weisheng
    Cai, Hao
    [J]. IEEE NANOTECHNOLOGY MAGAZINE, 2022, 16 (01) : 25 - 32
  • [29] Carbon nanotube-based nonvolatile random access memory for molecular computing
    Rueckes, T
    Kim, K
    Joselevich, E
    Tseng, GY
    Cheung, CL
    Lieber, CM
    [J]. SCIENCE, 2000, 289 (5476) : 94 - 97
  • [30] A new extension method of retention time for memory cell on dynamic random access memory
    Riho, Yoshiro
    Nakazato, Kazuo
    [J]. INTEGRATION-THE VLSI JOURNAL, 2014, 47 (03) : 329 - 338