Impact of series resistance on the operation of junctionless transistors

被引：22
|
作者：
Jeon, Dae-Young [1 ,3 ,4 ]
Park, So Jeong [1 ,3 ]
Mouis, Mireille [1 ]
Barraud, Sylvain [2 ]
Kim, Gyu-Tae [3 ]
Ghibaudo, Gerard [1 ]
机构：
[1] Minatec, Grenoble INP, IMEP, LAHC, BP 257, F-38016 Grenoble, France
[2] CEA, LETI Minatec, 17 Rue Martyrs, F-38054 Grenoble, France
[3] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea
[4] Korea Inst Sci & Technol, Inst Adv Composite Mat, Joellabuk Do 55324, South Korea
来源：
SOLID-STATE ELECTRONICS | 2017年 / 129卷
关键词：
Junctionless transistors (JLTs); Bulk neutral conduction; Series resistance (R-sd); Analytical modeling; De-embedded Rsd effects; NANOWIRE TRANSISTORS; NM;
D O I：
10.1016/j.sse.2016.12.004
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Transconductance (g(m)) and its derivative (dg(m)/dV(g)) of junctionless transistors (JLTs), considered as a possible candidate for future CMOS technology, show their unique operation properties such as bulk neutral and surface accumulation conduction. However, source/drain series resistance (R-sd) causes significant degradation of intrinsic g(m) and dg(m)/dV(g) behavior in JLTs. In this letter, the Rsd effects on the operation of JLTs were investigated in detail and also verified with analytical modeling equations. This work provides helpful information for a better understanding of the operation mechanism of JLTs with de-embedded R-sd effects. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码：103 / 107
页数：5
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