Impact of series resistance on the drain current variability in inversion mode and junctionless nanowire transistors

被引：0

作者：

Silva, Lucas Mota Barbosa da ^{[1
]}

Pavanello, Marcelo Antonio ^{[1
]}

Casse, Mikael ^{[2
]}

Barraud, Sylvain ^{[2
]}

Vinet, Maud ^{[2
]}

Faynot, Olivier ^{[2
]}

de Souza, Michelly ^{[1
]}

机构：

[1] Ctr Univ FEI, Dept Elect Engn, Sao Bernardo Do Campo, Brazil

[2] Univ Grenoble Alpes, CEA Leti, MINATEC Campus, Grenoble, France

来源：

SOLID-STATE ELECTRONICS | 2023年 / 208卷

基金：

巴西圣保罗研究基金会;

关键词：

SOI; Nanowire transistors; Series resistance; Variability; Electrical characterization; MOSFET; Parameter extraction; EXTRACTION; MISMATCH; MOSFET;

D O I：

10.1016/j.sse.2023.108737

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work analyzes the influence of source-drain series resistance variability over the drain current in junctionless and inversion mode nanowire transistors. A comparison between drain current and Y-function variability is presented using experimental data of nanowires with different widths and channel lengths. The source-drain series resistance variability is also presented. The results indicates that source-drain series resistance influence is higher on drain current variability for junctionless than inversion mode nanowire transistors.

引用

页数：4

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