Impact of series resistance on the operation of junctionless transistors

被引：22
|
作者：
Jeon, Dae-Young [1 ,3 ,4 ]
Park, So Jeong [1 ,3 ]
Mouis, Mireille [1 ]
Barraud, Sylvain [2 ]
Kim, Gyu-Tae [3 ]
Ghibaudo, Gerard [1 ]
机构：
[1] Minatec, Grenoble INP, IMEP, LAHC, BP 257, F-38016 Grenoble, France
[2] CEA, LETI Minatec, 17 Rue Martyrs, F-38054 Grenoble, France
[3] Korea Univ, Sch Elect Engn, Seoul 136701, South Korea
[4] Korea Inst Sci & Technol, Inst Adv Composite Mat, Joellabuk Do 55324, South Korea
来源：
SOLID-STATE ELECTRONICS | 2017年 / 129卷
关键词：
Junctionless transistors (JLTs); Bulk neutral conduction; Series resistance (R-sd); Analytical modeling; De-embedded Rsd effects; NANOWIRE TRANSISTORS; NM;
D O I：
10.1016/j.sse.2016.12.004
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Transconductance (g(m)) and its derivative (dg(m)/dV(g)) of junctionless transistors (JLTs), considered as a possible candidate for future CMOS technology, show their unique operation properties such as bulk neutral and surface accumulation conduction. However, source/drain series resistance (R-sd) causes significant degradation of intrinsic g(m) and dg(m)/dV(g) behavior in JLTs. In this letter, the Rsd effects on the operation of JLTs were investigated in detail and also verified with analytical modeling equations. This work provides helpful information for a better understanding of the operation mechanism of JLTs with de-embedded R-sd effects. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码：103 / 107
页数：5
相关论文
共 50 条
  • [41] Volume and interface conduction in InGaAs junctionless transistors
    Pirro, L.
    Park, H. J.
    Ionica, I.
    Bawedin, M.
    Cristoloveanu, S.
    Czornomaz, L.
    Djara, V.
    Deshpande, V.
    2016 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS 2016), 2016, : 104 - 107
  • [42] Analysis of the leakage current in junctionless nanowire transistors
    Trevisoli, Renan
    Doria, Rodrigo Trevisoli
    de Souza, Michelly
    Pavanello, Marcelo Antonio
    APPLIED PHYSICS LETTERS, 2013, 103 (20)
  • [43] The Influence of the Substrate Bias in Junctionless Nanowire Transistors
    Trevisoli, Renan D.
    Doria, Rodrigo T.
    de Souza, Michelly
    Pavanello, Marcelo A.
    2013 28TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO 2013), 2013,
  • [44] Effective Channel Length in Junctionless Nanowire Transistors
    Trevisoli, Renan
    Doria, Rodrigo T.
    de Souza, Michelly
    Pavanello, Marcelo A.
    2015 30TH SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO), 2015,
  • [45] The zero temperature coefficient in junctionless nanowire transistors
    Trevisoli, Renan Doria
    Doria, Rodrigo Trevisoli
    de Souza, Michelly
    Das, Samaresh
    Ferain, Isabelle
    Pavanello, Marcelo Antonio
    APPLIED PHYSICS LETTERS, 2012, 101 (06)
  • [46] Improvement of carrier ballisticity in junctionless nanowire transistors
    Akhavan, Nima Dehdashti
    Ferain, Isabelle
    Razavi, Pedram
    Yu, Ran
    Colinge, Jean-Pierre
    APPLIED PHYSICS LETTERS, 2011, 98 (10)
  • [47] MEASUREMENT OF SERIES COLLECTOR RESISTANCE IN BIPOLAR-TRANSISTORS
    MACK, WD
    HOROWITZ, M
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1982, 17 (04) : 767 - 773
  • [48] On the series resistance in staggered amorphous thin film transistors
    Cerdeira, Antonio
    Estrada, Magali
    Marsal, Lluis F.
    Pallares, Josep
    Iniguez, Benjamin
    MICROELECTRONICS RELIABILITY, 2016, 63 : 325 - 335
  • [49] CHARACTERISTICS OF STATIC INDUCTION TRANSISTORS - EFFECTS OF SERIES RESISTANCE
    MOCHIDA, Y
    NISHIZAWA, JI
    OHMI, T
    GUPTA, RK
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (07) : 761 - 767
  • [50] Random Dopant Variation in Junctionless nanowire Transistors
    Akhavan, Nima Dehdashti
    Ferain, Isabelle
    Razavi, Pedram
    Yu, Ran
    Colinge, Jean-Pierre
    2011 IEEE INTERNATIONAL SOI CONFERENCE, 2011,
12345