Investigation of Self-heating Effect in SOI tunnel Field-effect

被引：0

作者：

Qian, C. ^{[1
]}

Shi, Mao-Lin ^{[1
]}

Chen, Lin ^{[1
]}

Sun, Q. Q. ^{[1
]}

Zhou, Peng ^{[1
]}

Ding, S. J. ^{[1
]}

Zhang, D. W. ^{[1
]}

机构：

[1] Fudan Univ, State Key Lab ASIC & Syst, Schoolt Microelect, Shanghai 200433, Peoples R China

来源：

PROCEEDINGS OF 2015 IEEE 11TH INTERNATIONAL CONFERENCE ON ASIC (ASICON) | 2015年

关键词：

SOI; TFET; Self-heating effect; SILVACO TCAD;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

The built-in tunnel barrier in Tunneling Field Effect Transistors results in a low ON current. As an excellent dielectric isolation technology, silicon-on-insulator (SOI) technology makes TFET exhibit a higher ON current ratio. However, due to the low thermal conductivity of the buried SiO2 layer, heat dissipation and self-heating effect become serious issues of most SOI devices. In this paper, self-heating effect in SOI-TFET is investigated by using the SILVACO TCAD tools. The influences caused by structural characteristics on the self-heating effect are discussed. Furthermore, the impact of environmental temperature on the performance of the SOI-TFET device is also discussed with a wide range from 300 K to 500 K. Simulation results demonstrate that SOI-TFET has weak self-heating effect due to the Band-to-Band tunneling (BTBT) operating mechanism. Besides, the drive current of SOI-TFET exhibits a positive variation with increasing temperature which is contrary to the SOI-MOSFET.

引用

页数：4

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