Quasi-two-dimension physic-topological model of field-effect transistors (FETs) in view of the self-heating effect

被引：0
|
作者：
Sivyakov, DB [1 ]
Boldirev, DR [1 ]
机构：
[1] Saratov State Tech Univ, Saratov, Russia
来源：
APEDE'2002: FIFTH INTERNATIONAL CONFERENCE ON ACTUAL PROBLEMS OF ELECTRON DEVICES ENGINEERING | 2002年
关键词：
D O I：
10.1109/APEDE.2002.1044901
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In field-effect transistors of average and high power the influence of power, pick out in the channel on transistor characteristics is observed. This phenomenon is called the self-heating effect. The quasi-two-dimension physic-topological model of FETs in view of the self-heating effect is offered in the report.
引用
收藏
页码：82 / 85
页数：4
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