The Self-Heating Effect in Junctionless Fin Field-Effect Transistors Based on Silicon-on-Insulator Structures with Different Channel Shapes

被引：1

作者：

Atamuratov, A. E. ^{[1
]}

Jabbarova, B. O. ^{[1
]}

Khalilloev, M. M. ^{[1
]}

Yusupov, A. ^{[2
]}

机构：

[1] Urgench State Univ, Urgench 220100, Uzbekistan

[2] Tashkent Univ Informat Technol, Tashkent 100200, Uzbekistan

来源：

TECHNICAL PHYSICS LETTERS | 2021年 / 47卷 / 07期

关键词：

self-heating effect; lattice temperature; thermal conductivity; junctionless fin field-effect transistor; BURIED OXIDE; RELIABILITY; MOSFET;

D O I：

10.1134/S1063785021060055

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The self-heating effect is simulated in a nanoscale junctionless fin field-effect transistor fabricated on the basis of silicon-on-insulator structures with a transistor base cross section of a rectangular, trapezoidal, or triangular shape. It is shown that, for the structures under consideration, the temperature in the middle of the transistor is lower than along its lateral edges near the source and drain.

引用

页码：542 / 545

页数：4

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