Modeling the self-heating effect in SiGeHBTs

被引：8

作者：

Mnif, H ^{[1
]}

Zimmer, T ^{[1
]}

Battaglia, JL ^{[1
]}

Ardouin, B ^{[1
]}

机构：

[1] Univ Bordeaux 1, UMR 5818, Microelect Lab, IXL, F-33405 Talence, France

来源：

PROCEEDINGS OF THE 2002 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2002年

关键词：

D O I：

10.1109/BIPOL.2002.1042895

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes a new approach for modeling the self-heating phenomena in silicon germanium (SiGe) heterojunction bipolar transistors. (HBT). This approach is based on the physical resolution of the heat transfer differential equation. The model is compared to the electro-thermal model used in most commercial circuit simulators. This new approach produces the better self-heating agreement with measured data. For its validation, it is implemented into a recent compact model.

引用

页码：96 / 99

页数：4

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