Random Threshold Voltage Variability Induced by Gate-Edge Fluctuations in Nanoscale Metal-Oxide-Semiconductor Field-Effect Transistors

被引：31

作者：

Putra, Arifin Tamsir ^{[1
]}

Nishida, Akio ^{[2
]}

Kamohara, Shiro ^{[2
]}

Hiramoto, Toshiro ^{[1
,2
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

[2] MIRAI Selete, Tsukuba, Ibaraki 3058569, Japan

来源：

APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 02期

关键词：

LINE; ROUGHNESS;

D O I：

10.1143/APEX.2.024501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A very rapid method of estimating the effect of gate-edge fluctuation on threshold voltage (V-th) variability in metal-oxide-semiconductor field-effect transistors (MOSFETs) is proposed. An empirical model is developed, in which correlation width (W-c) from gate line-width roughness (LWR) is a key parameter of the model. The validity of the model is confirmed using the measured data and an autoregressive model. Wc is extracted from the gate line-edge shape depicted in a scanning electron microscope (SEM) image. This method is very useful for the intuitive understanding of the gate-edge fluctuation effect on V-th variability. (C) 2009 The Japan Society of Applied Physics

引用

页数：3

共 50 条

[41] GaN metal-oxide-semiconductor field-effect transistors on AlGaN/GaN heterostructure with recessed gate
Qingpeng Wang
Jin-Ping Ao
Pangpang Wang
Ying Jiang
Liuan Li
Kazuya Kawaharada
Yang Liu
Frontiers of Materials Science, 2015, 9 : 151 - 155
[42] GaN metal-oxide-semiconductor field-effect transistors on AlGaN/GaN heterostructure with recessed gate
Wang, Qingpeng
Ao, Jin-Ping
Wang, Pangpang
Jiang, Ying
Li, Liuan
Kawaharada, Kazuya
Liu, Yang
FRONTIERS OF MATERIALS SCIENCE, 2015, 9 (02) : 151 - 155
[43] Study on individual traps in metal-oxide-semiconductor field-effect transistors by means of thermally stimulated threshold voltage shift
Yonamoto, Yoshiki
JOURNAL OF THERMAL ANALYSIS AND CALORIMETRY, 2015, 122 (03) : 1299 - 1305
[44] Silicon complementary metal-oxide-semiconductor field-effect transistors with dual work function gate
Na, Kee-Yeol
Kim, Yeong-Seuk
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (12): : 9033 - 9036
[45] COMPARISON OF MEASUREMENT TECHNIQUES FOR GATE SHORTENING IN SUBMICROMETER METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
BHATTACHARYA, P
BARI, M
RAO, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (08): : 3409 - 3413
[46] Modeling of ballistic nanoscale metal-oxide-semiconductor field effect transistors
Fiori, G
Iannaccone, G
APPLIED PHYSICS LETTERS, 2002, 81 (19) : 3672 - 3674
[47] Direct Observation of Fluctuations in the Number and Individual Electronic Properties of Interface Traps in Nanoscale Metal-Oxide-Semiconductor Field-Effect Transistors
Tsuchiya, Toshiaki
Mori, Yuki
Morimura, Yuta
Mogami, Tohru
Ohji, Yuzuru
JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (06) : 0640011 - 0640015
[48] Multigate transistors as the future of classical metal-oxide-semiconductor field-effect transistors
Ferain, Isabelle
Colinge, Cynthia A.
Colinge, Jean-Pierre
NATURE, 2011, 479 (7373) : 310 - 316
[49] Low-threshold-voltage HfOxN p-channel metal-oxide-semiconductor field-effect transistors with partially suicided platinum gate electrode
Kadoshima, Masaru
Nabatame, Toshihide
Iwamoto, Kunihiko
Mise, Nobuyuki
Ota, Hiroyuki
Ogawa, Arito
Takahashi, Masashi
Ikeda, Minoru
Satake, Hideki
Toriumi, Akira
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2006, 45 (8 A): : 6225 - 6230
[50] EFFECT OF OXIDE FIELD ON HOT-CARRIER-INDUCED DEGRADATION OF METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
CHOI, JY
KO, PK
HU, C
APPLIED PHYSICS LETTERS, 1987, 50 (17) : 1188 - 1190

← 1 2 3 4 5 →