Random Threshold Voltage Variability Induced by Gate-Edge Fluctuations in Nanoscale Metal-Oxide-Semiconductor Field-Effect Transistors

被引：31

作者：

Putra, Arifin Tamsir ^{[1
]}

Nishida, Akio ^{[2
]}

Kamohara, Shiro ^{[2
]}

Hiramoto, Toshiro ^{[1
,2
]}

机构：

[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, Tokyo 1538505, Japan

[2] MIRAI Selete, Tsukuba, Ibaraki 3058569, Japan

来源：

APPLIED PHYSICS EXPRESS | 2009年 / 2卷 / 02期

关键词：

LINE; ROUGHNESS;

D O I：

10.1143/APEX.2.024501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A very rapid method of estimating the effect of gate-edge fluctuation on threshold voltage (V-th) variability in metal-oxide-semiconductor field-effect transistors (MOSFETs) is proposed. An empirical model is developed, in which correlation width (W-c) from gate line-width roughness (LWR) is a key parameter of the model. The validity of the model is confirmed using the measured data and an autoregressive model. Wc is extracted from the gate line-edge shape depicted in a scanning electron microscope (SEM) image. This method is very useful for the intuitive understanding of the gate-edge fluctuation effect on V-th variability. (C) 2009 The Japan Society of Applied Physics

引用

页数：3

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