Direct Observation of Fluctuations in the Number and Individual Electronic Properties of Interface Traps in Nanoscale Metal-Oxide-Semiconductor Field-Effect Transistors

被引：13

作者：

Tsuchiya, Toshiaki ^{[1
]}

Mori, Yuki ^{[1
]}

Morimura, Yuta ^{[1
]}

Mogami, Tohru ^{[2
]}

Ohji, Yuzuru ^{[2
]}

机构：

[1] Shimane Univ, Interdisciplinary Fac Sci & Engn, Matsue, Shimane 6908504, Japan

[2] Semicond Leading Edge Technol Inc, Tsukuba, Ibaraki 3058569, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 06期

关键词：

THRESHOLD VOLTAGE FLUCTUATION; RELIABLE MODEL; CHARGE; NOISE; CHANNEL;

D O I：

10.1143/JJAP.49.064001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Fluctuations in not only the number but also the individual electronic properties of interface traps in small-gate-area metal-oxide-semiconductor field-effect transistors (MOSFETs) containing just a few interface traps have been directly observed. This observation is based on an understanding of a newly observed phenomenon in the charge pumping characteristics, i.e., on-time (or off-time)-dependent charge pumping characteristics. It is shown that the fluctuation in the number of interface traps contained in an individual MOSFET is fairly large, and that there are various interface traps with individual carrier capture rates. These fluctuations may have an impact on the variation in threshold voltage of future digital metal-insulator-semiconductor devices. (C) 2010 The Japan Society of Applied Physics DOI: 10.1143/JJAP.49.064001

引用

页码：0640011 / 0640015

页数：5

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