CHARACTERIZATION OF THE ELECTROSTATIC DISCHARGE INDUCED INTERFACE TRAPS IN METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：1
|
作者：
Tseng, Jen-Chou [1 ,2 ]
Hwu, Jenn-Gwo [2 ]
机构：
[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan
[2] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 106, Taiwan
来源：
2009 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, VOLS 1 AND 2 | 2009年
关键词：
ESD; interface traps; oxide integrity; semiconductor reliability; GENERATION; BREAKDOWN; STRESS;
D O I：
10.1109/IRPS.2009.5173348
中图分类号：
TP301 [理论、方法];
学科分类号：
081202 ;
摘要：
The inter-face trap's characteristics in silicon dioxide induced by electrostatic discharge current impulse were studied using the transmission line pulsing technique and charge pumping method. It was observed that the electrostatic discharge stress induces far less amount of interface traps prior to breakdown and the interface traps distribution along the channel direction is more non-uniform and localized than dc stress. The possible mechanisms for interface trap generation and formation are suggested.
引用
收藏
页码：777 / +
页数：2
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