Enhancement in light-emission efficiency of InGaN/GaN multiple quantum well layer by a porous-GaN mirror

被引：9

作者：

Zhao, Chongchong ^{[1
]}

Yang, Xiaokun ^{[1
]}

Wei, Bin ^{[1
]}

Liu, Jie ^{[1
]}

Chen, Rongrong ^{[1
]}

Luan, Caina ^{[1
]}

Xiao, Hongdi ^{[1
]}

机构：

[1] Shandong Univ, Sch Microelect, Jinan 250100, Peoples R China

来源：

VACUUM | 2020年 / 182卷

基金：

中国国家自然科学基金;

关键词：

Selective EC etching; Porous-GaN DBR; InGaN/GaN; PL; Etching mechanism; LED; EMITTING DIODE; FABRICATION; FILM;

D O I：

10.1016/j.vacuum.2020.109669

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Mixed electrolyte of oxalic acid and NaNO3, which can be used to fabricate an InGaN/GaN multiple quantum well (MQW) structure with an embedded porous-GaN distributed Bragg reflector (DBR), is more effective than oxalic acid or NaNO3 solutions. Compared to the as-grown GaN-based film, the etched sample was significantly enhanced and narrowed in the intensity and line-width of photoluminescence (PL), respectively, which are contributable to strain relaxation of MQW layer and light-interference effect induced by forming the embedded porous-DBR mirror. Due to the presence of nanopores in the MQW layer, the mass-transport cause the crystalline quality of the MQW layer to deteriorate significantly during the regrowth of GaN-based light emitting diode (LED). Therefore, the performance enhancement of the PL in the LED with the embedded DBR structure should be contributable to improved external and internal quantum efficiencies.

引用

页数：8

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