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Hybridization of CdSe/ZnS Quantum Dots on InGaN/GaN Multiple Quantum Well Light-Emitting Diodes for Pink Light Emission
被引:0
|作者:
Huang, Chun-Yuan
[1
]
Su, Yan-Kuin
[1
]
Chen, Ying-Chih
[1
]
Wan, Cheng-Tien
[1
]
机构:
[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan
关键词:
D O I:
暂无
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
Pink light emission has been demonstrated front the hybrid CdSe/ZnS quantum dot-InGaN/CaN quantum well light-emitting diodes (LEDs). The QDs in toluene are blended in the resin matrix to become the nanophosphor. For the fabricated hybrid LED, it is found the light output power is greatly reduced due to the poor quantum yield (QY) of QDs (<50 %). Besides, the comparison of the electroluminescence (EL) spectra of the InGaN blue LED and the hybrid pink LED exhibit over 90% of the blue light centered at 448 nm has been down-converted to the red light at 636 nm. Consequently, purplish pink light with CIE-1931 chromaticity coordinates of (0.374, 0.147) is obtained. Also observed is the significant blue-shift of luminescence peak from QD-resin composite with respect to the photoluminescence peak from QD-toluene solution, which is due to the less attack of reabsorption of photon energies from smaller to lager QDs rather than the Forster energy transfer. The current-dependent and temperature-dependent EL spectra are also characterized to evaluate the thermal stability of our hybrid LED. In this demonstration, CdSe/ZnS QDs with different sizes/colors can be used as nanophosphors to fabricate color-converted LEDs. Nevertheless, QDs with higher QYs or more efficient device packagings should be adopted to improve the device efficiency.
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页码:101 / 103
页数:3
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