Study of Well Width in InGaN/GaN Multiple Quantum Well Light-Emitting Diodes

The optical and structural properties of InGaN/GaN multi-quantum wells (MQWs) grown on sapphire by metalorganic chemical vapor deposition (MOCVD) have been investigated by optical measurements of photoluminescence (PL), and structural analysis methods of high-resolution X-ray diffraction (HRXRD) and high-resolution transmission electron microscopy (HRTEM). Two typical samples are studied, both consisting of five periods of GaN barrier width of 11.8 nm with different InGaN well width of 2.95 nm and 1.7 nm. These results indicate that the crystal and optical properties of InGaN/GaN MQWs are improved with the narrower of the InGaN well width. The indium compositions, GaN barrier width and InGaN well width can be achieved by HRXRD simulation software, and the result is consistent with actual growth conditions of InGaN/GaN MQWs.