Experimental and theoretical study of blue InGaN/GaN multiple quantum well blue light-emitting diodes

被引：4

作者：

Li Wei-Jun ^{[1
]}

Zhang Bo ^{[1
]}

Xu Wen-Lan ^{[2
]}

Lu Wei ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

[2] E China Normal Univ, Dept Elect Engn, Shanghai 200062, Peoples R China

来源：

ACTA PHYSICA SINICA | 2009年 / 58卷 / 05期

基金：

中国国家自然科学基金;

关键词：

InGaN/GaN; light-emitting diode; numerical simulation; quantum dot model; LUMINESCENCE;

D O I：

10.7498/aps.58.3421

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A 2D simulation of electrical and optical characteristics of InGaN/GaN multiple quantum well blue light-emitting diodes by APSYS software with a dot-well model and well model are investigated. It shows that I-V and electrical luminescence simulation results based on the quantum dot model are in better agreement with the experimental data than that based purely on quantum well model. Moreover, simulation result also suggest that the non-equilibrium quantum transport plays an important role in the InGaN/GaN multiple quantum well light-emitting diodes.

引用

页码：3421 / 3426

页数：6

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