Origin of luminescence from InGaN diodes

被引：487
|
作者：
O'Donnell, KP [1 ]
Martin, RW [1 ]
Middleton, PG [1 ]
机构：
[1] Univ Strathclyde, Dept Phys & Appl Phys, Glasgow G4 0NG, Lanark, Scotland
来源：
PHYSICAL REVIEW LETTERS | 1999年 / 82卷 / 01期
关键词：
D O I：
10.1103/PhysRevLett.82.237
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We report the first direct observation of phase decomposition in a luminescent alloy and show that this decomposition, allied to quantum confinement enhancements, accounts for the surprisingly high efficiency of InGaN-based diodes manufactured by Nichia Chemical Industries. Hence nanostructure, rather than composition, is responsible for the success of these devices. A common nanostructure, in the form of nearly pure InN quantum dots, occurs across a large range of average indium content in InGaN and leads to a universal scalability of the optical spectra. [S0031-9007(98)08055-7].
引用
收藏
页码：237 / 240
页数：4
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