Step multiple quantum well enabled performance enhancement in InGaN/GaN based light-emitting diodes

In this work, we propose and investigate numerically InGaN/GaN based multiple quantum well (QW) blue light-emitting diodes (LEDs) with step quantum well (InGaN)/barrier (GaN) structures. We design four LED structures—(LED-A) InGaN/GaN rectangular quantum well, (LED-B) one down step in the middle of the QW created using sharp increase in In contents, (LED-C) one down step in the middle of the QW and the other down step in the right barrier away from QW and (LED-D) similar to LED-C barring one down step in the left barrier facing the QW. Using well-calibrated APSYS simulation program we compare the variation of output power and internal quantum efficiency of LEDs with input injection current and analyze them in the light of energy band diagram, electric field distribution, carrier concentration and radiative recombination rate. The proposed LED-D exhibits significant improvement in optical output power ~ 180.7% compared to conventional LED-A. Furthermore unlike other three LED structures, LED-D shows a very low internal quantum efficiency droop of 5.1% only at injection current of 120 mA.