Enhancement of light output power of InGaN/GaN multiple quantum well light-emitting diodes by titanium dioxide texturing

被引：1

作者：

Huang, Kuo-Chin ^{[1
]}

Lan, Wen-How ^{[2
]}

Huang, Kai Feng ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 300, Taiwan

[2] Natl Univ Kaohsiung, Dept Elect Engn, Kaohsiung 811, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 07期

关键词：

titanium dioxide (TiO2); textured; output power; external quantum efficiency;

D O I：

10.1143/JJAP.47.5438

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The enhancement of external quantum efficiency in InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) with a titanium dioxide (TiO2) textured film has been observed. The output power values of conventional and TiO2 textured LEDs Lit an injection Current of 20 mA are 6.25 and 8 mW, respectively. The external quantum efficiencies of the conventional and TiO2 textured LEDs at an injection Current of 20 mA are 11.5 and 14.8%, respectively. The external quantum efficiency of the TiO2 textured LEDs Lit an injection current of 20 mA is 28% higher than that of the conventional LEDs. A higher-output-power InGaN/GaN MQW LED has been obtained by coating with a TiO2 textured film.

引用

页码：5438 / 5440

页数：3

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