Determination of annealing of Temperature HfO2/Si metal-oxide-semiconductor devices

被引：0
|
作者：
Biswas, Debaleen [1 ]
Faruque, Sk Abdul Kader Md [1 ]
Chakraborty, Supratic [1 ]
机构：
[1] Saha Inst Nucl Phys, Kolkata 700064, W Bengal, India
来源：
SOLID STATE PHYSICS: PROCEEDINGS OF THE 58TH DAE SOLID STATE PHYSICS SYMPOSIUM 2013, PTS A & B | 2014年 / 1591卷
关键词：
Thin Film; High-k dielectric; DSC; FT-IR; XRD;
D O I：
10.1063/1.4872986
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Thermal behavior of thin high-k dielectric films (similar to 8.4 nm) of HfO2, deposited by reactive rf-sputtering technique on n-type Si (100) wafer, is studied by thermogravimetry (TG) and Differential Scanning Calorimetry (DSC) techniques. DSC results reflect partial crystallization of the film which starts at 250 degrees C and another transformation begins beyond 670 degrees C. The high-frequency (HF) capacitance - voltage (C-V) characteristics, measured for all the devices, annealed at different temperatures also corroborate the above observation.
引用
收藏
页码：1433 / 1434
页数：2
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