InGaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectric grown by atomic-layer deposition

被引：87
|
作者：
Goel, N. [1 ]
Majhi, P.
Chui, C. O.
Tsai, W.
Choi, D.
Harris, J. S.
机构：
[1] Intel Corp, Santa Clara, CA 95052 USA
[2] Stanford Univ, Solid State & Photon Lab, Stanford, CA 94305 USA
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 16期
关键词：
D O I：
10.1063/1.2363959
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The influence of various process conditions on the structural integrity and electrical properties of Al/HfO2/p-In0.13Ga0.87As metal-oxide-semiconductor capacitors was investigated. Room temperature capacitance voltage measurements revealed postdielectric deposition anneal reduced hysteresis by more than 0.5 V and sulfur passivation of InGaAs improved the capacitance frequency dispersion properties as well as reduced interface trap density. At V=V-FB-1 V, the leakage current densities similar to 1.3x10(-7), 0.4x10(-6), and 1.3x10(-6) A/cm(2) were measured in devices with annealed HfO2 (110 and 32 A) and sulfur-passivated InGaAs (110 A unannealed HfO2), respectively. Transmission electron microscopy revealed sharp epitaxial InGaAs/crystalline HfO2 and GaAs/InGaAs interfaces. (c) 2006 American Institute of Physics.
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页数：3
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