Determination of annealing of Temperature HfO2/Si metal-oxide-semiconductor devices

被引：0
|
作者：
Biswas, Debaleen [1 ]
Faruque, Sk Abdul Kader Md [1 ]
Chakraborty, Supratic [1 ]
机构：
[1] Saha Inst Nucl Phys, Kolkata 700064, W Bengal, India
来源：
SOLID STATE PHYSICS: PROCEEDINGS OF THE 58TH DAE SOLID STATE PHYSICS SYMPOSIUM 2013, PTS A & B | 2014年 / 1591卷
关键词：
Thin Film; High-k dielectric; DSC; FT-IR; XRD;
D O I：
10.1063/1.4872986
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Thermal behavior of thin high-k dielectric films (similar to 8.4 nm) of HfO2, deposited by reactive rf-sputtering technique on n-type Si (100) wafer, is studied by thermogravimetry (TG) and Differential Scanning Calorimetry (DSC) techniques. DSC results reflect partial crystallization of the film which starts at 250 degrees C and another transformation begins beyond 670 degrees C. The high-frequency (HF) capacitance - voltage (C-V) characteristics, measured for all the devices, annealed at different temperatures also corroborate the above observation.
引用
收藏
页码：1433 / 1434
页数：2
相关论文
共 50 条
  • [1] Effect of excess hafnium on HfO2 crystallization temperature and leakage current behavior of HfO2/Si metal-oxide-semiconductor devices
    Biswas, Debaleen
    Singh, Manavendra Narayan
    Sinha, Anil Kumar
    Bhattacharyya, Satyaranjan
    Chakraborty, Supratic
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2016, 34 (02):
  • [2] Formation of reliable HfO2/HfSixOy gate-dielectric for metal-oxide-semiconductor devices
    Quan, YC
    Lee, JE
    Kang, H
    Roh, Y
    Jung, D
    Yang, CW
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (11B): : 6904 - 6907
  • [3] Characteristics of HfO2/HfSixOy film as an alternative gate dielectric in metal-oxide-semiconductor devices
    Kang, H
    Roh, Y
    Bae, G
    Jung, D
    Yang, CW
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (04): : 1360 - 1363
  • [4] Heteroepitaxy of GaSb on Si(111) and fabrication of HfO2/GaSb metal-oxide-semiconductor capacitors
    Ohtake, Akihiro
    Mano, Takaaki
    Miyata, Noriyuki
    Mori, Takahiro
    Yasuda, Tetsuji
    [J]. APPLIED PHYSICS LETTERS, 2014, 104 (03)
  • [5] Gate inversion effect in Si1-xGex/HfO2/Si metal-oxide-semiconductor devices -: art. no. 243507
    Silva, JCE
    de Oliveira, EL
    de Sousa, JS
    Freire, JAK
    Freire, VN
    Farias, GA
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (24) : 1 - 3
  • [6] Study of Interface Charge Densities for ZrO2 and HfO2 Based Metal-Oxide-Semiconductor Devices
    Maity, N. P.
    Maity, Reshmi
    Thapa, R. K.
    Baishya, S.
    [J]. ADVANCES IN MATERIALS SCIENCE AND ENGINEERING, 2014, 2014
  • [7] HIGH-K HFO2 BASED METAL-OXIDE-SEMICONDUCTOR DEVICES USING SILICON AND SILICON CARBIDE SEMICONDUCTOR
    Maity, N. P.
    Pandey, A.
    Chakraborty, S.
    Roy, M.
    [J]. JOURNAL OF NANO- AND ELECTRONIC PHYSICS, 2011, 3 (01) : 947 - 955
  • [8] Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide charge
    Negara, M. A.
    Cherkaoui, K.
    Hurley, P. K.
    Young, C. D.
    Majhi, P.
    Tsai, W.
    Bauza, D.
    Ghibaudo, G.
    [J]. JOURNAL OF APPLIED PHYSICS, 2009, 105 (02)
  • [9] Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties
    Suzuki, Rena
    Taoka, Noriyuki
    Yokoyama, Masafumi
    Kim, Sang-Hyeon
    Hoshii, Takuya
    Maeda, Tatsuro
    Yasuda, Tetsuji
    Ichikawa, Osamu
    Fukuhara, Noboru
    Hata, Masahiko
    Takenaka, Mitsuru
    Takagi, Shinichi
    [J]. JOURNAL OF APPLIED PHYSICS, 2012, 112 (08)
  • [10] Tunable work functions of platinum gate electrode on HfO2 thin films for metal-oxide-semiconductor devices
    Kim, Yong-Mu
    Lee, Jang-Sik
    [J]. APPLIED PHYSICS LETTERS, 2008, 92 (10)
12345