Characteristics of HfO2/HfSixOy film as an alternative gate dielectric in metal-oxide-semiconductor devices

被引：32

作者：

Kang, H

Roh, Y ^{[1
]}

Bae, G

Jung, D

Yang, CW

机构：

[1] Sungkyunkwan Univ, Sch Elect & Comp Engn, Suwon 440746, South Korea

[2] Sungkyunkwan Univ, Dept Phys, Brain Korea 21 Phys Res Div, Suwon 440746, South Korea

[3] Sungkyunkwan Univ, Inst Basic Sci, Suwon 440746, South Korea

[4] Sungkyunkwan Univ, Sch Met & Mat Engn, Suwon 440746, South Korea

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2002年 / 20卷 / 04期

关键词：

D O I：

10.1116/1.1490383

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have characterized physical and electrical properties of the HfO2/HfSixOy thin film for gate oxides in the metal-oxide-semiconductor device. The oxidation of Hf deposited directly on the Si substrate results in the HfSixOy interfacial layer and the high-k HfO2 film simultaneously. Interestingly, the postoxidation N-2 annealing of the HfO2/HfSixOy thin film reduces (increases) the thickness of an amorphous HfSixOy layer (HfO2 layer). This phenomenon causes the increase of the effective dielectric constant, while maintaining the excellent interfacial properties: The equivalent oxide thickness and the leakage current density of the Pd-HfO2/HfSixOy-Si capacitor were 1.4 nm and 5 x 10(-3) A/cm(2) at 2 V after compensating the flatband voltage of 1 V, respectively. (C) 2002 American Vacuum Society.

引用

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页码：1360 / 1363

页数：4

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