Effect of atomic layer deposition growth temperature on the interfacial characteristics of HfO2/p-GaAs metal-oxide-semiconductor capacitors

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[1] Liu, C.
[2] Zhang, Y.M.
[3] Zhang, Y.M.
[4] Lv, H.L.
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Lv, H.L. | 1600年 / American Institute of Physics Inc.卷 / 116期
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