Physics-based device models for nanoscale double-gate MOSFETs

被引:3
|
作者
Chen, Q [1 ]
Wang, L [1 ]
Meindl, JD [1 ]
机构
[1] Georgia Inst Technol, Microelect Res Ctr, Atlanta, GA 30332 USA
关键词
D O I
10.1109/ICICDT.2004.1309911
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
Compact, physics-based models of subthreshold swing and threshold voltage ate presented for undoped double-gate (DG) MOSFETs in symmetric, asymmetric, and ground-plane modes of operation. Applying the new device models, a novel scale-length based methodology is demonstrated to comprehensively and exhaustively investigate threshold voltage variations in DG MOSFETs. In light of ultra-thin silicon film used as the channel and possible introduction of high-permittivity gate dielectrics, physical, analytical models of quantum mechanical effects, gate direct tunneling current, and fringe-induced barrier lowering effect are developed to assess their impact on DG MOSFET scalability. Scaling limits projections indicate that individual DG MOSFETs with good turn-off behavior are feasible at 10nm scale; however, practical exploitation of these devices toward gigascale integrated systems requires significant improvement in process control.
引用
收藏
页码:73 / 79
页数:7
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