Analytical temperature dependent model for nanoscale double-gate MOSFETs reproducing advanced transport models

被引：4
|
作者：
Cheralathan, Muthupandian [1 ]
Sampedro, Carlos [2 ]
Gamiz, Francisco [2 ]
Iniguez, Benjamin [1 ]
机构：
[1] Univ Rovira & Virgili, DEEEA, E-43007 Tarragona, Spain
[2] Univ Granada, Dept Elect, Nanoelect Res Grp, E-18071 Granada, Spain
来源：
SOLID-STATE ELECTRONICS | 2014年 / 98卷
关键词：
Nanoscale double-gate (DG); Hydrodynamic transport; Temperature dependence; 2D Monte Carlo;
D O I：
10.1016/j.sse.2014.04.008
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper we extend our compact model for nanoscale double-gate (DG) MOSFETs which considers a hydrodynamic transport model to include the effect of the temperature dependence. Temperature dependence equations are incorporated to the expressions of the mobility and saturation velocity. For model validation we have considered a symmetric 22 nm double-gate MOSFET template device optimized for low-stand-by-power applications. Comparison between the numerical 2D Monte Carlo (MC) simulations and the compact model shows a good degree of agreement. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码：2 / 6
页数：5
相关论文
共 50 条
  • [1] Compact drain-current model for reproducing advanced transport models in nanoscale double-gate MOSFETs
    Cheralathan, M.
    Sampedro, C.
    Roldan, J. B.
    Gamiz, F.
    Iannaccone, G.
    Sangiorgi, E.
    Iniguez, B.
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2011, 26 (09)
  • [2] Analytical drain current model reproducing advanced transport models in nanoscale cylindrical surrounding-gate (SRG) MOSFETs
    Cheralathan, M.
    Iannaccone, G.
    Sangiorgi, E.
    Iniguez, B.
    [J]. JOURNAL OF APPLIED PHYSICS, 2011, 110 (03)
  • [3] Analytical Drain Current Model using Temperature dependence model in nanoscale Double-Gate (DG) MOSFETs
    Cheralathan, M.
    Sampedro, C.
    Gamiz, F.
    Iniguez, B.
    [J]. 2013 14TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (ULIS), 2013, : 142 - 145
  • [4] Drain current model for nanoscale double-gate MOSFETs
    Hariharan, Venkatnarayan
    Thakker, Rajesh
    Singh, Karmvir
    Sachid, Angada B.
    Patil, M. B.
    Vasi, Juzer
    Rao, V. Ramgopal
    [J]. SOLID-STATE ELECTRONICS, 2009, 53 (09) : 1001 - 1008
  • [5] Multiband simulation of quantum transport in nanoscale double-gate MOSFETs
    Iwata, Hideyuki
    Matsuda, Toshihiro
    Ohzone, Takashi
    [J]. SOLID-STATE ELECTRONICS, 2009, 53 (10) : 1130 - 1134
  • [6] Analytical Threshold Voltage Model Using NEGF Approach for Nanoscale Double-gate MOSFETs
    Yang, Jian-Hong
    Cai, Xue-Yuan
    Yang, Ai-Guo
    Zhang, Zhi-Chen
    [J]. 2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1-3, 2008, : 534 - 538
  • [7] ANALYTICAL MODELS FOR N(+)-P(+) DOUBLE-GATE SOI MOSFETS
    SUZUKI, K
    SUGII, T
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (11) : 1940 - 1948
  • [8] Numerical Simulation of Nanoscale Double-Gate MOSFETs
    Stenzel, R.
    Mueller, L.
    Herrmann, T.
    Klix, W.
    [J]. ACTA POLYTECHNICA, 2006, 46 (05) : 35 - 39
  • [9] Physics-based device models for nanoscale double-gate MOSFETs
    Chen, Q
    Wang, L
    Meindl, JD
    [J]. 2004 INTERNATIONAL CONFERENCE ON INTEGRATED CIRCUIT DESIGN AND TECHNOLOGY, 2004, : 73 - 79
  • [10] An analytical subthreshold current model for ballistic double-gate MOSFETs
    Autran, JL
    Munteanu, D
    Tintori, O
    Aubert, M
    Decarre, E
    [J]. NSTI NANOTECH 2004, VOL 2, TECHNICAL PROCEEDINGS, 2004, : 171 - 174
12345