Fabrication and Design of 10 kV PiN Diodes Using On-axis 4H-SiC

被引：4

作者：

Salemi, Arash ^{[1
]}

Buono, Benedetto ^{[2
]}

Hallen, Anders ^{[1
]}

Ul Hassan, Jawad ^{[3
]}

Bergman, Peder ^{[3
]}

Zetterling, Carl Mikael ^{[1
]}

Ostling, Mikael ^{[1
]}

机构：

[1] KTH Royal Inst Technol, S-16440 Kista, Sweden

[2] Fairchild Semicond, S-16440 Kista, Sweden

[3] Linkoping Univ, Dept Phys Chem & Biol, S-58183 Linkoping, Sweden

来源：

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 | 2014年 / 778-780卷

关键词：

On-axis; 4H-SiC; PiN Diode; lifetime enhancement; V-F;

D O I：

10.4028/www.scientific.net/MSF.778-780.836

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

10 kV PiN diodes using on-axis 4H-SiC were designed, fabricated, and measured. A lifetime enhancement procedure was done by carbon implantation followed by high temperature annealing to increase lifetime to above 2 mu s. The device simulation software Sentaurus TCAD has been used in order to optimize the diode. All fabricated diodes are fully functional and have a V-F of 3.3 V at 100 A/cm(2) at 25 degrees C, which was decreased to 3.0 V at 300 degrees C.

引用

页码：836 / +

页数：3

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