Fabrication and Design of 10 kV PiN Diodes Using On-axis 4H-SiC

被引：4
|
作者：
Salemi, Arash [1 ]
Buono, Benedetto [2 ]
Hallen, Anders [1 ]
Ul Hassan, Jawad [3 ]
Bergman, Peder [3 ]
Zetterling, Carl Mikael [1 ]
Ostling, Mikael [1 ]
机构：
[1] KTH Royal Inst Technol, S-16440 Kista, Sweden
[2] Fairchild Semicond, S-16440 Kista, Sweden
[3] Linkoping Univ, Dept Phys Chem & Biol, S-58183 Linkoping, Sweden
来源：
SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 | 2014年 / 778-780卷
关键词：
On-axis; 4H-SiC; PiN Diode; lifetime enhancement; V-F;
D O I：
10.4028/www.scientific.net/MSF.778-780.836
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
10 kV PiN diodes using on-axis 4H-SiC were designed, fabricated, and measured. A lifetime enhancement procedure was done by carbon implantation followed by high temperature annealing to increase lifetime to above 2 mu s. The device simulation software Sentaurus TCAD has been used in order to optimize the diode. All fabricated diodes are fully functional and have a V-F of 3.3 V at 100 A/cm(2) at 25 degrees C, which was decreased to 3.0 V at 300 degrees C.
引用
收藏
页码：836 / +
页数：3
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