12-19kV 4H-SiC pin diodes with low power loss

被引：118
|
作者：
Sugawara, Y [1 ]
Takayama, D [1 ]
Asano, K [1 ]
Singh, R [1 ]
Palmour, J [1 ]
Hayashi, T [1 ]
机构：
[1] Kansai Elect Power Co, Tech Res Ctr, Amagasaki, Hyogo 6610974, Japan
来源：
ISPSD'01: PROCEEDINGS OF THE 13TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2001年
关键词：
D O I：
10.1109/ISPSD.2001.934552
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
12 - 19 W 4H-SiC UHV pin diodes have been developed for the first time. The developed UHV diodes have a low VF of less than 1/4(th) and short trr of less than 1/30(th), as compared with those of commercialized 6 W Si diodes. Therefore, they can drastically reduce both the conduction loss and the switching loss of electric power conversion equipment.
引用
收藏
页码：27 / 30
页数：4
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