SXRT investigations on electrically stressed 4H-SiC PIN diodes for 6.5 kV

被引：2

作者：

Kallinger, Birgit ^{[1
]}

Berwian, Patrick ^{[1
]}

Friedrich, Jochen ^{[1
]}

Hecht, Christian ^{[2
,3
]}

Peters, Dethard ^{[2
,3
]}

Friedrichs, Peter ^{[2
,3
]}

Thomas, Bernd ^{[2
,4
]}

机构：

[1] Fraunhofer IISB, Dept Crystal Growth, Schottkystr 10, D-91058 Erlangen, Germany

[2] SiCED Elect Dev, D-91058 Erlangen, Germany

[3] Infineon Technol AG, D-91058 Erlangen, Germany

[4] Dow Corning Semicond Solut, Auburn, MI 48611 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2012 | 2013年 / 740-742卷

关键词：

PiN diodes; synchrotron x-ray topography; dislocations; stacking faults; HOMOEPITAXIAL GROWTH;

D O I：

10.4028/www.scientific.net/MSF.740-742.899

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

4H-SiC PiN diodes for 6.5 kV were manufactured on both 4 degrees and 8 degrees off-cut substrates and subjected to an electrical stress test on wafer level and subsequent analysis of structural defects present in the active area of the diodes. For 8 degrees off-cut diodes, the electrical characteristics with respect to leakage current and forward voltage drift are worse than the electrical characteristics of 4 degrees off-cut diodes. Furthermore, a large number of stacking faults was found in 8 degrees off-cut diodes, but little evidence for bipolar degradation was found in 4 degrees off-cut diodes. Therefore, bipolar degradation was significantly reduced by avoiding BPDs in the active area of PiN diodes, i.e. by the use of 4 degrees off-cut substrates. Furthermore, a strong correlation was found between the electrical screening test on wafer level and critical defects.

引用

页码：899 / +

页数：2

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