High power 4H-SiC pin diodes (10 kV class) with record high carrier lifetime

被引：28
|
作者：
Ivanov, Pavel A.
Levinshtein, Michael E.
Palmour, John W.
Das, Mrinal K.
Hull, Brett A.
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] CREE Inc, Durham, NC 27703 USA
来源：
SOLID-STATE ELECTRONICS | 2006年 / 50卷 / 7-8期
基金：
俄罗斯基础研究基金会;
关键词：
silicon carbide; junction diode; carrier lifetime;
D O I：
10.1016/j.sse.2006.06.018
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The hole lifetime tau(p) in the n-base and isothermal (pulse) current-voltage characteristics have been measured in 4H-SiC diodes with a 10 kV blocking voltage (100 mu m base width). The tau(p) value found from open circuit voltage decay (OCVD) measurements is 3.7 mu s at room temperature. To the best of the authors' knowledge, the above value of tau(p) is the highest reported for 4H-SiC. The forward voltage drops V-F are 3.44 V at current density j = 100 A/cm(2) and 5.45 V at j = 1000 A/cm(2). A very deep modulation of the blocking base by injected non-equilibrium carriers has been demonstrated. Calculations in term of a simple semi-analytical model describe well the experimental results obtained. (c) 2006 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1368 / 1370
页数：3
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