Development of 17 kV 4H-SiC PiN diode

被引：0

作者：

黄润华 ^{[1
]}

陶永洪 ^{[1
]}

汪玲 ^{[1
]}

陈刚 ^{[1
]}

柏松 ^{[1
]}

栗锐 ^{[1
]}

李赟 ^{[1
]}

赵志飞 ^{[1
]}

机构：

[1] State Key Laboratory of Wide-Bandgap Semiconductor Power Electronics, Nanjing Electronic Devices Institute

来源：

Journal of Semiconductors | 2016年 / 08期

基金：

国家高技术研究发展计划(863计划);

关键词：

4H-SiC; power device; termination; JTE;

D O I：

暂无

中图分类号：

TN312.4 [];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

The design, fabrication, and electrical characteristics of a 4H-SiC PiN diode with breakdown voltage higher than 17 kV are presented. The three-zone JTE has been used in the fabrication. Numerical simulations have been performed to optimize the parameters of the edge termination technique. The epilayer properties of the N-type are 175 m with a doping of 2 ×10;cm;. With the three-zone JTE, a typical breakdown voltage of 17 kV has been achieved.

引用

页码：49 / 52

页数：4

共 10 条

[1] Characterization of the effects of nitrogen and hydrogen passivation on SiO2/4H-SiC interface by low temperature conductance measurements[J]. 王弋宇,彭朝阳,申华军,李诚瞻,吴佳,唐亚超,赵艳黎,陈喜明,刘可安,刘新宇.Journal of Semiconductors. 2016(02)
[2] Development of 10 kV 4H-SiC JBS diode with FGR termination[J]. 黄润华,陶永洪,曹鹏飞,汪玲,陈刚,柏松,栗瑞,李赟,赵志飞.Journal of Semiconductors. 2014(07)
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[9] Design, Fabrication and Characterization of 5 kV 4H-SiC p+n Planar Bipolar Diodes Protected by Junction Termination Extension[J] . Raynaud Christophe,Lazar Mihai,Planson Dominique,Chante Jean-Pierre,Sassi Z..Materials Science Forum . 2004 (457)
[10] Optimization of JTE Edge Terminations for 10 kV Power Devices in 4H-SiC[J] . Wang X.,Cooper James A..Materials Science Forum . 2004 (457)

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