Demonstration of the first 10-kV 4H-SiC Schottky barrier diodes

被引：93
|
作者：
Zhao, JH [1 ]
Alexandrov, P
Li, X
机构：
[1] Rutgers State Univ, Dept Elect & Comp Engn, SiCLAB, Piscataway, NJ 08854 USA
[2] United Silicon Carbide Inc, New Brunswick, NJ 08901 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2003年 / 24卷 / 06期
关键词：
edge termination; high-voltage diode; Schottky diode; SiC diode;
D O I：
10.1109/LED.2003.813370
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter reports the demonstration of the first 4H-SiC Schottky barrier diode (SBD) blocking over 10 kV based on 115-mum n-type epilayer doped to 5.6 x 10(14) cm(-3) through the use of a multistep junction termination extension. The blocking voltage substantially surpasses the former 4H-SiC SBD record of 4.9 kV. A current density of 48 A/cm(2) is achieved with a forward voltage drop of 6 V. The Schottky barrier height, ideality factor, and electron mobility for this very thick epilayer are reported. The SBD's specific-on resistance is also reported.
引用
收藏
页码：402 / 404
页数：3
相关论文
共 50 条
  • [1] Electrical Characteristics of 10-kV 4H-SiC MPS Rectifiers with High Schottky Barrier Height
    Yifan Jiang
    Woongje Sung
    Jayant Baliga
    Sizhen Wang
    Bongmook Lee
    Alex Huang
    [J]. Journal of Electronic Materials, 2018, 47 : 927 - 931
  • [2] Electrical Characteristics of 10-kV 4H-SiC MPS Rectifiers with High Schottky Barrier Height
    Jiang, Yifan
    Sung, Woongje
    Baliga, Jayant
    Wang, Sizhen
    Lee, Bongmook
    Huang, Alex
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 2018, 47 (02) : 927 - 931
  • [3] Performance and stability of large-area 4H-SiC 10-kV junction barrier Schottky rectifiers
    Hull, Brett A.
    Sumakeris, Joseph J.
    O'Loughlin, Michael J.
    Zhang, Qingchun
    Richmond, Jim
    Powell, Adrian R.
    Imhoff, Eugene A.
    Hobart, Karl D.
    Rivera-Lopez, Angel
    Hefner, Allen R., Jr.
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (08) : 1864 - 1870
  • [4] Barrier height homogeneity for 4.5 kV 4H-SiC Schottky diodes
    Bluet, J. M.
    Ziane, D.
    Guillot, G.
    Tournier, D.
    Brosselard, P.
    Montserrat, J.
    Godignon, P.
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 2006, 40 (4-6) : 399 - 404
  • [5] Fabrication of 3.1kV/10A 4H-SiC Junction Barrier Schottky Diodes
    Wang, Chengsen
    Yuan, Hao
    Song, Qingwen
    Tang, Xiaoyan
    Jia, Renxu
    Zhang, Yuming
    Zhang, Yimen
    Shen, Yidong
    [J]. PROCEEDINGS OF 2015 IEEE 11TH INTERNATIONAL CONFERENCE ON ASIC (ASICON), 2015,
  • [6] Drift-free 10-kV, 20-A 4H-SiC PiN diodes
    Brett A. Hull
    Mrinal K. Das
    Joseph J. Sumakeris
    James T. Richmond
    Sumi Krishnaswami
    [J]. Journal of Electronic Materials, 2005, 34 : 341 - 344
  • [7] Drift-free 10-kV, 20-A 4H-SiC PiN diodes
    Hull, BA
    Das, MK
    Sumakeris, JJ
    Richmond, JT
    Krishnaswami, S
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 2005, 34 (04) : 341 - 344
  • [8] Barrier Inhomogeneities of Mo Schottky Barrier Diodes on 4H-SiC
    Naretto, M.
    Perrone, D.
    Ferrero, S.
    Scaltrito, L.
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2, 2010, 645-648 : 227 - +
  • [9] Barrier inhomogeneities of tungsten Schottky diodes on 4H-SiC
    Hamida, A. Ferhat
    Ouennoughi, Z.
    Sellai, A.
    Weiss, R.
    Ryssel, H.
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (04)
  • [10] A 3 kV Schottky barrier diode in 4H-SiC
    Wahab, Q
    Kimoto, T
    Ellison, A
    Hallin, C
    Tuominen, M
    Yakimova, R
    Henry, A
    Bergman, JP
    Janzen, E
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (04) : 445 - 447
12345